Characterization of (Bi0.5Na0.5)1−xBaxTiO3 grown by the TSSG method

M. Woll, M. Burianek, D. Klimm, S. Gorfman, M. Mühlberg
J CRYST GROWTH 401 (2014) 351 - 354, doi:10.1016/j.jcrysgro.2013.11.102             »Artikel

Vapor Transport Growth of Wide Bandgap Materials

M. Bickermann and T. Paskova, In: P. Rudolph (ed.), Handbook of Crystal Growth, Bulk Crystal Growth - Basic Technologies, 2nd Edition, Vol. 2a (2014), 209 - 240, doi:10.1016/B978-0-444-63303-3.00016-X.     »Artikel

"A study of the step-flow growth of the PVT-grown AlN crystals by a multi-scale modeling method"

W. Guo, J. Kundin, M. Bickermann and H. Emmerich, CRYSTENGCOMM 29 (2014) 6564 - 6577, doi:10.1039/C4CE00175C              »Artikel

"UV-B Induced Secondary Plant Metabolites."

Schreiner, M., Martínez-Abaigar, J., Glaab, J. and Jansen, M.,  Optik & Photonik, Volume 9, Issue 2, p.34–37, 2014       »Artikel

"Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates"

Richter, E., Fleischmann, S., Goran, D., Hagedorn, S., John, W., Mogilatenko, A., Prasai, D., Zeimer, U., Weyers, M., Tränkle, G., Journal of Electronic Materials, 43 (4), pp. 814-818, 2014        »Artikel

"Anisotropic Responsivity of AlGaN Metal–Semiconductor–Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates"

Brendel, M., Knigge, A., Brunner, F., Einfeldt, S., Knauer, A., Kueller, V., Zeimer, U., Weyers, M., Journal of Electronic Materials, 43 (4), pp. 833-837, 2014       »Artikel

"MOVPE growth of Al x Ga 1-x N with x ~ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs "

Knauer, A., Zeimer, U., Kueller, V., Weyers, M., Physica Status Solidi (C) Current Topics in Solid State Physics, 11 (3-4), pp. 377-380, 2014       »Artikel

"Solar-blind Al x Ga 1-x N MSM photodetectors on patterned AlN/sapphire templates with 0.4 < x < 1 "

Knigge, A., Brendel, M., Brunner, F., Einfeldt, S., Knauer, A., Kueller, V., Zeimer, U., Weyers, M., Physica Status Solidi (C), Current Topics in Solid State Physics, 11 (3-4), pp. 802-805, 2014

"Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth"

Mogilatenko, A., Küller, V., Knauer, A., Jeschke, J., Zeimer, U., Weyers, M., Tränkle, G.,  Journal of Crystal Growth, 402, pp. 222-229, 2014       »Artikel

"Performance Characteris tics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates"

Martens, M., Mehnke, F., Kuhn, C., Reich, C., Kueller, V., Knauer, A., Netzel, C., Hartmann, C., Wollweber, J., Rass, J., Wernicke, T., Bickermann, M., Weyers, M., Kneissl, M., IEEE Photonics Technology Letters, 26 (4), art. no. 6678168, pp. 342-345., 2014       »Artikel

"Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes"

Mehnke, F., Kuhn, C., Guttmann, M., Reich, C., Kolbe, T., Kueller, V., Knauer, A., Lapeyrade, M., Einfeldt, S., Rass, J., Wernicke, T., Weyers, M., Kneissl, M., Applied Physics Letters, 105 (5), art. no. 051113, 2014       »Artikel

"Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al, In)GaN laser diodes"

Jeschke, J., Zeimer, U., Redaelli, L., Einfeldt, S., Kneissl, M., Weyers, M., Applied Physics Letters 105 (17), art. no. 173501, 2014       »Artikel

"Bulk AIN grwoth by physical vapour transport"

, , and Semiconductor Science and Technology Volume 29 Number, 2014       »Artikel

"Versetzungsreduzierte AIN- und AIGaNSchichten als Basis für UV-LEDs"

V.Küller, Cuvillier Verlag, 2014      »Artikel

"UV irradiation - to boost health - promoting compounds in plants"

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, frequent, 06/2014, S.7      »Artikel

"Anerkennung für beharrliche Ingenieursarbeit"

Verbundjournal, Nov. 2014, 99/2014, S. 8-9      »Artikel