Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

M. Brendel, M. Helbling, A. Knigge, F. Brunner and M. Weyers, J. Appl. Phys., vol. 118, no. 244504 (2015).        »Article

V-pit to truncated pyramid transition in AlGaN-based heterostructures

A. Mogilatenko, J. Enslin, A. Knauer, F. Mehnke, K. Bellmann, T. Wernicke, M. Weyers and M. Kneissl, Semicond. Sci. Technol., vol. 30, no. 11, p. 114010 (2015).       »Article

Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates

U. Zeimer, J. Jeschke, A. Mogilatenko, A. Knauer, V. Kueller, V. Hoffmann, C. Kuhn, T. Simoneit, M. Martens, T. Wernicke, M. Kneissl, and M. Weyer, Semicond. Sci. Technol., vol. 30, no. 11, p. 114008 (2015).      »Article

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, R. Goldhahn, and M. Kneiss, Appl. Phys. Lett., vol. 107, no. 14, pp. 142101 (2015).      »Article

Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs

J. Glaab, C. Ploch, R. Kelz, C. Stölmacker, M. Lapeyrade, N. Lobo Ploch, J. Rass, T. Kolbe, S. Einfeldt, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers and M. Kneissl, Mater. Res. Soc. Symp. Proc., vol. 1792 (2015).       »Article

Semi-polar (1122) -GaN templates grown on 100 mm trench-patterned r-plane sapphire

F. Brunner, F. Edokam, U. Zeimer, W. John, D. Prasai, O. Krüger, and M. Weyers, phys. stat. sol. (b), vol. 252, no. 5, pp. 1189-1194 (2015).        »Article

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

E. Gridneva, E. Richter, M. Feneberg, M. Weyers, R. Goldhahn, and G. Tränkle, phys. stat. sol. (b), vol. 252, no. 5, pp. 1180-1188 (2015).        »Article

In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

C. Prall, C. Kaspari, F. Brunner, K. Haberland, M. Weyers and D. Rueter, J. Cryst. Growth, vol. 415, pp. 1-6 (2015).         »Artikel

"Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes"

Kolbe, T., Stellmach, J., Mehnke, F., Rothe,M.-A., Kueller, V., Knauer, A., Einfeldt, S., Wernicke, T., Weyers, M., Kneissl, M., physica status solidi (a), doi: 10.1002/pssa.201532479, 2015        »Artikel

"Lichtdoping für Pflanzen"

Peters, W., Leibniz-Journal 2/2015, p.18-20, 2015        »Artikel

"High-power UV-B LEDs with long lifetime"

Rass, J., Kolbe, T., Lobo-Ploch, N., Wernicke, T., Mehnke, F., Kuhn, C., Enslin, J., Guttmann, M., Reich, C., Mogilatenko, A., Glaab, J., Stoelmacker, C., Lapeyrade, M., Einfeldt, S., Weyers, M., Kneissl, M.,Proceedings of SPIE - The International Society for Optical Engineering, 9363, art. no. 93631K, 2015        »Artikel

"Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes"

Mehnke, F., Kuhn, C., Stellmach, J., Kolbe, T., Lobo-Ploch, N., Rass, J., Rothe, M.-A., Reich, C., Ledentsov, N., Pristovsek, M., Wernicke, T., Kneissl, M., Journal of Applied Physics, 117 (19), art. no. 195704, 2015

"Current spreading in UV-C LEDs emitting at 235 nm"

Lapeyrade, M., Eberspach, F., Glaab, J., Lobo-Ploch, N., Reich, C., Kuhn, C., Guttmann, M., Wernicke, T., Mehnke, F., Einfeldt, S., Knauer, A., Weyers, M., Kneissl, M., Proceedings of SPIE - The International Society for Optical Engineering, 9363, art. no. 93631P, 2015        »Artikel

"Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire"

Fleischmann, S., Mogilatenko, A., Hagedorn, S., Richter, E., Goran, D., Schäfer, P., Zeimer, U., Weyers, M., Tränkle, G., Journal of Crystal Growth, 414, pp. 32-37, 2015        »Artikel

"Top- and bottom-illumination of solar-blind AlGaN metal–semiconductor–metal photodetectors"

Brendel, M., Helbling, M., Knauer, A., Einfeldt, S., Knigge, A., Weyers, M., Physica Status Solidi (A) Applications and Materials Science, 212 (5), pp. 1021-1028, 2015

"Enhanced quantum efficiency of AlGaN photodetectors by patterned growth"

Knigge, A., Brendel, M., Zeimer, U., Helbling, M., Knauer, A., Brunner, F., Kueller, V., Einfeldt, S., Weyers, M.,Physica Status Solidi (A) Applications and Materials Science, 212 (5), pp. 1005-1010, 2015

"Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire"

Feneberg, M., Winkler, M., Klamser, J., Stellmach, J., Frentrup, M., Ploch, S., Mehnke, F., Wernicke, T., Kneissl, M., Goldhahn, R., Applied Physics Letters, 106 (18), art. no. 182102, 2015

"Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature"

Glaab, J., Ploch, C., Kelz, R., Stölmacker, C., Lapeyrade, M., Ploch, N.L., Rass, J., Kolbe, T., Einfeldt, S., Mehnke, F., Kuhn, C., Wernicke, T., Weyers, M., Kneissl, M., Journal of Applied Physics, 118 (9), art. no. 094504, 2015        »Artikel

"Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N"

Kusch, G., Nouf-Allehiani, M., Mehnke, F., Kuhn, C., Edwards, P.R., Wernicke, T., Knauer, A., Kueller, V., Naresh-Kumar, G., Weyers, M., Kneissl, M., Trager-Cowan, C., Martin, R.W., Applied Physics Letters, 107 (7), art. no. 072103, 2015

"UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates"

Jeschke, J., Martens, M., Knauer, A., Kueller, V., Zeimer, U., Netzel, C., Kuhn, C., Krueger, F., Reich, C., Wernicke, T., Kneissl, M., Weyers, M.,  IEEE Photonics Technology Letters, 27 (18), pp. 1969-1972, 2015        »Artikel

"Vapor Transport Growth of Wide Bandgap Materials"

T. Paskova, M. Bickermann, Handbook of Crystal Growth, Second Edition, Vol 2A: Bulk Crystal Growth - Basic Technologies, P. Rudolph (ed.), Elsevier Science Ltd. 2015, Chapter 16, 2015       »Artikel

"Schnell und präzise - Fast and precise"

Adlershof Spezial 40, 2015, S. 4-7      »Artikel

"Ferdinand-Braun-Institut: Excellence in optoelectronics - a highly capable partner for research and Industry"

Photonics in Germany, 2015, S.66-67       »Artikel

"Dynamic Insitu Monitoring of Atomic Layer Desposition by ALD Real Time Monitor"

Photonics in Germany, 2015, S.86      »Artikel

"Ultraviolet LEDs – from Research to Real-World Applications"

Photonics in Germany, 2015, S. 56-57      »Artikel