UVC LED: Bench scale irradiation of microorganisms with various wavelengths

T. Schwarzenberger, A. Neuner, J. Glaab, J. Eggers, Proc. IUVA World Congress (2016).

Betrieb und zukünftige Entwicklung in der UV-Technologie

T. Schwarzenberger, J. Eggers, in: Band 75: Zukunftssicherer Betrieb von Wasserversorgungsanlagen, Technologiezentrum Wasser Schriftenreihe, pp. 83-96, (2016).

Effects on detection of radical formation in skin due to solar irradiation measured by EPR spectroscopy

S. Albrecht, S. Ahlberg, I. Beckers, D. Kockott, J. Lademann, V. Paul, L. Zastrow, M.C. Meinke, Methods, Vol. 109, pp. 44-54 (2016), DOI: 10.1016/j.ymeth.2016.06.005.

Application of UV Emitters in Dermatological Phototherapy

U. Wollina, B. Seme, A. Scheibe, E. Gutmann, in: M. Kneissl, J. Rass (Eds.): III-Nitride Ultraviolet Emitters - Technology and Applications, Springer Series in Materials Science, Vol. 227, Springer (2016), pp. 293-319.

Optical Polarization and Light Extraction from UV LEDs

J. Rass, N. Lobo Ploch, in: M. Kneissl, J. Rass (Eds.): III-Nitride Ultraviolet Emitters - Technology and Applications, Springer Series in Materials Science, Vol. 227, Springer (2016), pp. 137-170.

UV-B Elicitation of Secondary Plant Metabolites

M. Schreiner, I. Mewis, S. Neugart, R. Zrenner, J. Glaab, M. Wiesner, M. A. K. Jansen, in: M. Kneissl, J. Rass (Eds.): III-Nitride Ultraviolet Emitters - Technology and Applications, Springer Series in Materials Science, Vol. 227, Springer (2016), pp. 387-414.

Free radicals induced by sunlight in different spectral regions - in vivo versus ex vivo study

S.B. Lohan, R. Muller, S. Albrecht, K. Mink, K. Tscherch, F. Ismaeel, J. Lademann, S. Rohn, M.C. Meinke, Exp. Dermatol., Vol. 25, Issue 5, pp. 380-385 (2016), DOI: 10.1111/exd.12987.

Temperature and doping dependent changes in surfacerecombination during UV illumination of (Al)GaN bulk layers

C. Netzel, J. Jeschke, F. Brunner, A. Knauer, M. Weyers, J. Appl. Phys., Vol. 120, Issue 9, 095307 (2016), DOI: 10.1063/1.4962319.

Ultraviolette Leuchtdioden - Von der Chiptechnologie zur Anwendung

S. Einfeldt, M. Weyers, G. Tränkle, GIT Labor-Fachzeitschrift, Vol. 3, pp. 43-45 (2016).

Electronic properties of Si-doped AlxGa1-xN with aluminum mole above 80%

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, Journal of Applied Physics 120, 145702 (2016); doi: dx.doi.org/10.1063/1.4964442

Open IP strategies for enabling substainability transtitions

J. Sternkopf, F. Tietze, E. Eppinger, P. Vimalnath, Centre for Technology Management working paper series, No. 10 December (2016)

Triangular-shaped sapphire patterning for HVPE grown AlGaN layers

S. Fleischmann, E. Richter, A. Mogilatenko, D. Prasai, R.-St. Unger, M. Weyers and G. Tränkle, Physica status solidi (a), DOI: 10.1002/pssa.201600751

Microbial Diversity and Parasitic Load in Tropical Fish of Different Environmental Conditions

P. Hennersdorf, S. Kleinertz, S. Theisen, M.A. Abdul-Aziz, G. Mrotzek, H.W. Palm and H.P. Saluz, PLOS ONE 11(3), e0151594.

Quantification of matrix and impurity elements in AlxGa1−xN compounds by secondary ion mass spectrometry

P. Jörchel,  P. Helm, F. Brunner, A. Thies, O. Krüger and M. Weyers, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Volume 34, Issue 3, 10.1116/1.4943658

Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures

F. Tabataba-Vakili, T. Wunderer, M. Kneissl, Z. Yang, M. Teepe, M. Batres, M. Feneberg, B. Vancil, and N.M. Johnson, Appl. Phys. Lett., vol. 109, no. 18, pp. 181105 (2016).

Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, Ch. Kuhn, J. Rass, N.L. Ploch, T. Wernicke, M. Weyers and M. Kneissl, Proceedings of the 18th ICMOVPE, Journal of Crystal Growth

Precipitates originating from tungsten crucible parts in AlN bulk crystals grown by the PVT method

F. Langhans, S. Kiefer, C. Hartmann, T. Markurt, T. Schulz, Ch. Guguschev, M. Naumann, S. Kollowa, A. Dittmar, J. Wollweber and M. Bickermann, CRYST RES TECHNOL 51 (2016) 129 - 136, doi:10.1002/crat.201500201.

AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs

S. Hagedorn, A. Knauer, A. Mogilatenko, E. Richter, and M. Weyers, phys. stat. sol. (a), early view (2016).

Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

M. Rychetsky, I. Koslow, B. Avinc, J. Rass, T. Wernicke, K. Bellmann, L. Sulmoni, V. Hoffmann, M. Weyers, J. Wild, J. Zweck, B. Witzigmann, and M. Kneissl, J. Appl. Phys., vol. 119, no. 095713 (2016).

Process control of MOCVD growth for LEDs by in-situ photoluminescence

C. Prall, K. Haberland, C. Kaspari, F. Brunner, M. Weyers, D. Rueter, Proc. SPIE 9768, Photonics West, San Francisco, USA, Feb. 13-18, 97681A (2016).

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, Appl. Phys. Lett., vol. 108, no. 15, pp. 151108 (2016).

Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs

J. Glaab, N. Lobo Ploch, J. Rass, T. Kolbe, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, C. Stoelmacker, V. Kueller, A. Knauer, S. Einfeldt, M. Weyers, M. Kneissl, Proc. SPIE 9748, Photonics West, San Francisco, USA, Feb. 13-18, 97481O (2016).

Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg

M. Rychetsky, I.L. Koslow, T. Wernicke, J. Rass, V. Hoffmann, M. Weyers, and M. Kneissl, phys. stat. sol. (b), vol. 253, no. 1, pp. 169-173 (2016).

Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces

A. Mogilatenko, A. Knauer, U. Zeimer and M. Weyers, Semicond. Sci. Technol., vol. 31, no. 2, p. 025007 (2016).

Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds

D. Nd. Faye, E. Wendler, M. Felizardo, S. Magalhães, E. Alves, F. Brunner, M. Weyers, and K. Lorenz, J. Phys. Chem. C, vol. 120, no. 13, pp. 7277-7283 (2016).

Nitride-Based UV-LEDs and Their Application : UVB and UVC LEDs enable new applications in disinfection, medicine, plant growth, sensing and material processing

J. Rass and N. Lobo Ploch, Optik & Photonik, Volume 11 Issue 3, pages 36–40, June 2016, DOI: 10.1002/opph.201600020

Microbiome analysis and detection of pathogenic bacteria of Penaeus monodon from Jakarta Bay and Bali

Vincensius S.P. Oetama, Philipp Hennersdorf, Muslihudeen A. Abdul-Aziz, Grit Mrotzek, Haryanti Haryanti, Hans Peter Saluz (2016) PLoS ONE

Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl and M. Weyers, phys. stat. sol. (b), Vol. 253, No. 5, pp. 809-813 (2016).

Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices

C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann, CrystEngComm 2016, Accepted Manuscript, DOI: 10.1039/C6CE00622A

Kinetics of AlGaN metal-organic vapor phase epitaxy for deep-UV applications

A. Lobanova, E. Yakovlev, J. Jeschke, A. Knauer and M. Weyers, Jpn. J. Appl. Phys., Vol. 55, No. 5S, 05FD07 (2016)

Vom Methodenmix zur Strategie – Instrumente der Zukunftsforschung zur Strategieentwicklung in Verbundprojekten

A. Biedermann, C. Dreher, A. Scheel, Sammelband „Zukunftsfragen – Einblick in aktuelle Debatten der Zukunftsforschung“ (2016), LIT-Vertrag

III-Nitride Ultraviolet Emitters - Technology and Applications

M. Kneissl, J. Rass (Eds.), Springer Series in Materials Science, Vol. 227, Springer (2016).