High-quality AIN grown on a thermally decomposed sapphire surface

S. Hagedorn, A. Knauer, F. Brunner, U. Zeimer, M. Weyers, Journal of Crystal Growth Volume 479, 1 December 2017, Pages 16-21 (2017).

Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices

M. Guttmann, M. Hermann, J. Enslin, S. Graupeter, L. Sulmoni, C. Kuhn, T. Wernicke, M. Kneissl, Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041S (2017).

Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

H. K. Cho, I. Ostermay, U. Zeimer, J. Enslin, M. Guttmann, T. Kolbe, A. Knauer, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl , IEEE PHOTONICS TECHNOLOGY LETTERS, VOL.29, NO. 24, DECEMBER 15 (2017).

Influence of AlN buffer layer on growth of AlGaN by HVPE

S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle, Physica Status Solidi (b), Volume 254, Issue 8, DOI 10.1002/pssb.201600696 (2017).

UV-LED-Based Fluorescence and Reflectance Sensor System for Dermatological Diagnostics

E. Wyrwich, B. Seme, R. Skoczowsky, F. Stüpmann, M. Moschall, G. Khazaka, J. Schleusener, AMA Conferences 2017, Proceedings Sensor, Chapter P4.3 - Optical Sensors 2017, pages 658 – 663, 10.5162/sensor2017/P4.3 (2017).

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

M. Lapeyrade, S. Alame, A. Mogilatenko, J. Glaab, R.-St. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, Journal of Applied Physics 122, 125701 (2017).

In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor

C. Prall, C. Kaspari, A. Knauer, K. Haberland, M. Weyers, D. Rueter, tm - Technisches Messen, vol. 84, no. 11, pp. 747-752 (2017).

Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

H.K. Cho, O. Krüger, A. Külberg, J. Rass, U. Zeimer, T. Kolbe, A. Knauer, S. Einfeldt, M. Weyers , M. Kneissl, Semicond. Sci. Technol., vol. 32, no. 12, pp. 12LT01 (2017).

Triangular-shaped sapphire patterning for HVPE grown AlGaN layers

S. Fleischmann, E. Richter, A. Mogilatenko, R.-S. Unger, D. Prasai, M. Weyers, G. Tränkle, phys. stat. sol. (a), vol. 214, no. 9, pp. 1600751 (2017).

Influence of AlN buffer layer on growth of AlGaN by HVPE

S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle, phys. stat. sol. (b), vol. 254, no. 8, pp. 1600696 (2017).

Avoidance of instable photoluminescence intensity from AlGaN bulk layers

C. Netzel, J. Jeschke, A. Knauer, M. Weyers, phys. stat. sol. (b), vol. 254, no. 8, pp. 1600672 (2017).

Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern

M. Lapeyrade, J. Glaab, A. Knauer, C. Kuhn, J. Enslin, C. Reich, M. Guttmann, F. Mehnke, T. Wernicke and S. Einfeldt, Semicond. Sci. Technol., vol. 32, no. 4, pp. 045019 (2017).

AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage

M. Brendel, F. Brunner, A. Knigge, and M. Weyers, Proc. SPIE 10104, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101040J (2017).

Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, S. Hagedorn, M. Lapeyrade, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, M. Weyers, M. Kneissl, IEEE Journal of Selected Topics in Quantum Electronics, Volume: 23, Issue: 2, DOI: 10.1109/JSTQE.2016.2597541 (2017).

In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs

A. Knauer, F. Brunner, T. Kolbe, S. Hagedorn, V. Kueller and M. Weyers, Proc. SPIE 10124, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101240Q (2017).

Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

C. De Santi, M. Meneghini, D. Monti, J. Glaab, M. Guttmann, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, and E. Zanoni, Photonics Res., vol. 5, no. 2, pp. A44-A51 (2017).

Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, T. Wernicke, M. Kneissl, Proc. SPIE 10124, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101240T (2017).

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy

G. Kusch, F. Mehnke, J. Enslin, P.R. Edwards, T. Wernicke, M. Kneissl and R.W. Martin, Semicond. Sci. Technol., vol. 32, no. 03, pp. 035020 (2017).

Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

A. Mogilatenko, A. Knauer, U. Zeimer, C. Hartmann, H. Oppermann, M. Weyers, J. Cryst. Growth, vol. 462, pp. 18-23 (2017).

Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 2, 2000108 (2017).

Defect-Related Degradation of AlGaN-Based UV-B LEDs

D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, and M. Kneissl, IEEE J. Quantum Electron., vol. 53, no. 1, 2200109 (2017).