UV-LED-Curing of Lightweight Materials

C. Dreyer, Proc. RadTech Europe Conference & Exhibition 2017, Prague/Prag.

UV-Curable Thermosetting Polymers for (Optical) Coatings and Photonics

M. Köhler, Proc. RadTech Europe Conference & Exhibition 2017, Prague/Prag.

UV LED custom interconnection for enhanced heat dissipation
S. Nieland; D. Mitrenga, D. Karolewski, O., Brodersen, T. Ortlepp, Proc. Smart Systems Integration 2017, Cork.

Influence of interconnection on the longterm reliability of UV LED packages

S. Nieland, D. Mitrenga, D. Karolewski, P. Rotsch, O. Brodersen, T. Ortlepp, Proc. SPIE Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240S (2017), DOI: 10.1117/12.2250289.

Technologieentwicklungen erkennen und steuern. Teil 1: Indikatoren zur Technologieerkennung und -bewertung

E. Eppinger, A. Tauber, V. Jarotschkin, Ein Praxisleitfaden - Technologieentwicklung erkennen und Steuern, FU Berlin (2017).

UV-B induced changes in secondary plant metabolites

M. Schreiner, M. Wiesner-Reinhold, S. Baldermann, F. S. Hanschen, S. Neugart, in: B. R. Jordan (Ed.): UV-B Radiation and Plant Life: Molecular Biology to Ecology, CABI, 39-57 (2017).

CASE: Wissenschaftsmanagement in MINT-Instituten

N. Hübener, D. Friedrich, in: M. Lemmens, P. Horváth, M. Seiter (Hrsg.): Wissenschaftsmanagement – Handbuch & Kommentar, Edition Wissenschaftsmanagement, Bd. 9, Lemmens, 216-226 (2017).

From UV Protection to Protection in the Whole Spectral Range of the Solar Radiation: New Aspects of Sunscreen Development

L. Zastrow, M.C. Meinke, S. Albrecht, A. Patzelt, J. Lademann, Advances in Experimental Medicine and Biology, Volume 996, 311-318 (2017), DOI: 10.1007/978-3-319-56017-5_26.

ROS production and glutathione response in keratinocytes after application of beta-carotene and VIS/NIR irradiation

S.B. Lohan, K. Vitt, P. Scholz, C.M. Keck, M.C. Meinke, Chemico-Biolical Interactions, Volume 280, 1-7 (2017), DOI: 10.1016/j.cbi.2017.12.002.

The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers

M. Martens, C. Kuhn , T. Simoneit , S. Hagedorn , A. Knauer, T. Wernicke , M. Weyers, M. Kneissl, Applied Physics Letters, Volume 110, Issue 8, 081103 (2017), DOI: 10.1063/1.4977029.

Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

T. Kolbe, A. Knauer , J. Rass, H. K. Cho, S. Hagedorn, S. Einfeldt, M. Kneissl, M. Weyers, Materials, Volume 10, Issue 12, 1396 (2017), DOI: 10.3390/ma10121396.

High-quality AIN grown on a thermally decomposed sapphire surface

S. Hagedorn, A. Knauer, F. Brunner, U. Zeimer, M. Weyers, Journal of Crystal Growth, Volume 479, 16-21 (2017), DOI: 10.1016/j.jcrysgro.2017.09.019.

Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices

M. Guttmann, M. Hermann, J. Enslin, S. Graupeter, L. Sulmoni, C. Kuhn, T. Wernicke, M. Kneissl, Proc. SPIE Volume 10104, Gallium Nitride Materials and Devices XII, 101041S (2017), DOI: 10.1117/12.2250573.

Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

H. K. Cho, I. Ostermay, U. Zeimer, J. Enslin, M. Guttmann, T. Kolbe, A. Knauer, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl, IEEE Photonics Technology Letters, Volume 29, Issue 24, 2222-2225 (2017), DOI: 10.1109/LPT.2017.2771526.

Influence of AlN buffer layer on growth of AlGaN by HVPE

S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle, Physica Status Solidi (b), Volume 254, Issue 8, 1600696 (2017), DOI: 10.1002/pssb.201600696.

UV-LED-Based Fluorescence and Reflectance Sensor System for Dermatological Diagnostics

E. Wyrwich, B. Seme, R. Skoczowsky, F. Stüpmann, M. Moschall, G. Khazaka, J. Schleusener, Proceedings Sensor 2017, Chapter P4.3 - Optical Sensors 2017, 658 – 663 (2017), DOI: 10.5162/sensor2017/P4.3.

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

M. Lapeyrade, S. Alame, A. Mogilatenko, J. Glaab, R.-St. Unger, C. Kuhn, T. Wernicke, P. Vogt, A. Knauer, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, Journal of Applied Physics, Volume 122, Issue 12, 125701 (2017), DOI: 10.1063/1.4993447.

In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor

C. Prall, C. Kaspari, A. Knauer, K. Haberland, M. Weyers, D. Rueter, tm - Technisches Messen, Volume 84, Issue 11, 747-752 (2017), DOI: 10.1515/teme-2017-0038.

On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry

M. Brendel, F. Brunner, M. Weyers, Journal of Applied Physics, Volume 122, Issue 17, 174501 (2017), DOI: 10.1063/1.4993538.

Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

H.K. Cho, O. Krüger, A. Külberg, J. Rass, U. Zeimer, T. Kolbe, A. Knauer, S. Einfeldt, M. Weyers , M. Kneissl, Semiconductor Science and Technology, Volume 32, Number 12, 12LT01 (2017).

Triangular-shaped sapphire patterning for HVPE grown AlGaN layers

S. Fleischmann, E. Richter, A. Mogilatenko, R.-S. Unger, D. Prasai, M. Weyers, G. Tränkle, Physica Status Solidi (a), Volume 214, Issue 9, 1600751 (2017), DOI: 10.1002/pssa.201600751.

Influence of AlN buffer layer on growth of AlGaN by HVPE

S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle, Physica Status Solidi (b), Volume 254, Issue 8, 1600696 (2017), DOI: 10.1002/pssb.201600696.

Avoidance of instable photoluminescence intensity from AlGaN bulk layers

C. Netzel, J. Jeschke, A. Knauer, M. Weyers, Physica Status Solidi (b), Volume 254, Issue 8, 1600672 (2017), DOI: 10.1002/pssb.201600672

Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern

M. Lapeyrade, J. Glaab, A. Knauer, C. Kuhn, J. Enslin, C. Reich, M. Guttmann, F. Mehnke, T. Wernicke and S. Einfeldt, Semiconductor Science and Technology, Volume 32, Number 4, 045019 (2017).

AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage

M. Brendel, F. Brunner, A. Knigge, and M. Weyers, Proc. SPIE Volume 10104, Gallium Nitride Materials and Devices XII, 101040J (2017), DOI: 10.1117/12.2250742.

In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs

A. Knauer, F. Brunner, T. Kolbe, S. Hagedorn, V. Kueller and M. Weyers, Proc. SPIE Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240Q (2017), DOI: 10.1117/12.2253867.

Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

C. De Santi, M. Meneghini, D. Monti, J. Glaab, M. Guttmann, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, and E. Zanoni, Photonics Research, Volume 5, Issue 2, A44-A51 (2017), DOI:10.1364/PRJ.5.000A44.

Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation

D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, T. Wernicke, M. Kneissl, Proc. SPIE Volume 10124, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, 101240T (2017), DOI: 10.1117/12.2253843.

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy

G. Kusch, F. Mehnke, J. Enslin, P.R. Edwards, T. Wernicke, M. Kneissl and R.W. Martin, Semiconductor Science and Technology, Volume 32, Number 3, 035020 (2017).

Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

A. Mogilatenko, A. Knauer, U. Zeimer, C. Hartmann, H. Oppermann, M. Weyers, Journal of Crystal Growth, Volume 462, 18-23 (2017), DOI: 10.1016/j.jcrysgro.2016.12.099.

Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, IEEE Journal of Selected Topics in Quantum Electronics, Volume 23, Issue 2, 2000108 (2017), DOI: 10.1109/JSTQE.2016.2597541.

Defect-Related Degradation of AlGaN-Based UV-B LEDs

D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, and M. Kneissl, IEEE Transactions on Electron Devices, Volume 64, Issue 1, 200-205 (2017), DOI: 10.1109/TED.2016.2631720.