Stabilization of sputtered AlN/sapphire templates during high temperature annealing

S. Hagedorn, S. Walde, A. Mogilatenko, M. Weyers, L. Cancellara, M. Albrecht, D. Jaeger,  Journal of Crystal Growth, Volume 512, 142-146 (2019), DOI: 10.1016/j.jcrysgro.2019.02.024.

Degradation of (In)AlGaN-based UVB LEDs and migration of hydrogen

J. Glaab, J. Ruschel, T. Kolbe, A. Knauer, J. Rass, H.K. Cho, N. Lobo Ploch, S. Kreutzmann, S. Einfeldt, M. Weyers, M. Kneissl,  IEEE Photonics Technology Letters, Early Access Version (2019), DOI: 10.1109/LPT.2019.2900156.

AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire

S. Hagedorn, A. Knauer, M. Weyers, F. Naumann, H. Gargouri, Journal of Vacuum Science & Technology A, Volume 37, Issue 2, 020914 (2019), DOI: 10.1116/1.5079473.

Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm

F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, M. Kneissl, Applied Physics Express, Volume 12, Number 1, 012008 (2019), DOI: 10.7567/1882-0786/aaf788.

Influence of quartz on Silicon incorporation in HVPE grown AIN

S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle, Journal of Crystal Growth, Volume 507, 295-298 (2019), DOI: 10.1016/j.jcrysgro.2018.11.028.

Crystal defect analysis in AIN layers grown by MOVPE on bulk AIN

A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, R.-S. Unger, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann, Journal of Crystal Growth, Volume 505, 69-73 (2019), DOI: 10.1016/j.jcrysgro.2018.10.021.