In vivo SPF and UVA‐PF determination using (hybrid) diffuse reflectance spectroscopy and a multi‐lambda‐LED light source

C. M. Throm, G. Wiora, C. Reble, J. Schleusener, S. Schanzer, H. Karrer, L. Kolbe, G. Khazaka, M. C. Meinke, J. Lademann,Journal of Biophotonics, DOI: 10.1002/jbio.202000348, (2020).

Low resistance n-contact for UVC LEDs by a two-step plasma etching process

H.K. Cho, J.H. Kang, L. Sulmoni, K. Kunkel, J. Rass, N. Susilo, T. Wernicke, S. Einfeldt, M. Kneissl, Semicond. Sci. Technol., vol. 35, no. 09, pp. 095019, (2020).

The 2020 UV emitter roadmap

H. Amano, R. Collazo, C. De Santi, S. Einfeldt, M. Funato, J. Glaab, S. Hagedorn, A. Hirano, H. Hirayama, R. Ishii, Y. Kashima, Y. Kawakami, R. Kirste, M. Kneissl, R. Martin, F. Mehnke, M. Meneghini, A. Ougazzaden, P.J. Parbrook, S. Rajan, P. Reddy, F. Römer, J. Ruschel, B. Sarkar, F. Scholz, L.J. Schowalter, P. Shields, Z. Sitar, L. Sulmoni, T. Wang, T. Wernicke, M. Weyers, B. Witzigmann, Y.-R. Wu, T. Wunderer, Y. Zhang, Appl. Phys., vol. 53, no. 50, pp. 503001, (2020).

In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

J. Ruschel, J. Glaab, F. Mahler, T. Kolbe, S. Einfeldt, J.W. Tomm, Appl. Phys. Lett., vol. 117, no. 12, pp. 121104, DOI: 10.1063/5.0018751, (2020).

The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB-LED Structures

A. Knauer, A. Mogilatenko, J. Weinrich, S. Hagedorn, S. Walde, T. Kolbe, L. Cancellara, M. Weyers, Cryst. Res. Technol., vol. 55, no. 9, Special Issue: Dedicated to Prof. W. Neumann on his 75th Birthday, pp. 1900215, (2020).

Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates

N. Lobo-Ploch, F. Mehnke, L. Sulmoni, H. K. Cho, M. Guttmann, J. Glaab, K. Hilbrich, T. Wernicke, S. Einfeldt, M. Kneissl, Appl. Phys. Lett. 117, 111102, (2020).

EPR Spectroscopy as a Method for ROS Quantification in the Skin

S.B. Lohan, D. Ivanov, N. Schüler, B. Berger, S. Albrecht, M. C. Meinke, Reactive Oxygen Species, Methods and Protocols, Springer Nature, (2020),

Application of 280nm In-Situ Metrology to study the Influence of AlN Templates on Surface Roughness and Strain Effects in UVA/UVB LEDs

K. Prince, A. Knauer, A. Mogilatenko, M. Weyers, K. Haberland, Int. Conf. on Compound Semiconductor Manufacturing Technology, Dig., pp. 33-36, (2020).

Impact of High-Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy

O. Rettig, F. Scholz, Y. Li, J. Biskupek, U. Kaiser, S. Hagedorn, M. Weyers, R. Müller,K. Thonke, phys. stat. sol. (a), vol. 217, no. 16, pp. 2000251, (2020).

Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers

L. Sulmoni, F. Mehnke, A. Mogilatenko, M. Guttmann1, T. Wernicke, M. Kneissl, Photonics Res., vol. 8, no. 8, pp. 1381-1387, (2020).

Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes

S. Hagedorna, S. Waldea, A. Knauera, N. Susilob, D. Pacaka,b, L. Cancellarac, C. Netzela, A. Mogilatenkoa, C. Hartmann, T. Wernicke, M. Kneissla, M. Weyersa, phys. stat. sol. (a), vol. 217, no. 14, Special Issue: Ultraviolet Materials and Devices, pp. 1901022, (2020).

Enhanced wall plug efficiency of AIGaN-based deep-UV LEDs using Mo/AI as p-contact

H. K. Cho, N. Susilo, M. Guttmann, J. Rass, I. Ostermay, S. Hagedorn, E. Ziffer, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl, IEEE PTL, (2020).

Impact of Insulators and Their Deposition Method on the Reliability of AlInGaN-Based UVB LEDs

J. Rass, J. Ruschel, J. Glaab, I. Ostermay, S. Einfeldt, EEE Photonics Technol. Lett., vol. 32, no.14, pp. 891-894, (2020).

Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact

H.K. Cho, N. Susilo, M. Guttmann, J. Rass, I. Ostermay, S. Hagedorn, E. Ziffer, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl, EEE Photonics Technol. Lett., vol. 32, no.14, pp. 891-894, (2020).

Overcoming the excessive compressive strain in AlGaN epitaxy by introducinghigh Si-doping in AlN templates

C.-Y. Huang, S. Walde, C.-L. Tsai, C. Netzel, H.-H. Liu, S. Hagedorn, Y.-R. Wu, Y.-K. Fu, and M. Weyerst, Jpn. J. Appl. Phys., vol. 59, no. 7, pp. 070904, (2020).

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

C. Traeger-Cowan, A. Alasamari, W. Avis, J. Bruckbauer, P. R. Edwards, G. Ferenczi, B. Hourahine, A. Kotzai, S. Kraeusel, G. Kusch, R. W. Martin, R. McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, E. Pascal, D. Thomson, S. Vespucci, M.D. Smith, P.J. Parbrook, J. Enslin, F. Mehnke, C. Kuhn, T. Wernicke, M. Kneissl, S. Hagedorn, A. Knauer, S. Walde, M. Weyers, P.-M. Coulon, P.A. Shields, J. Bai, Y.P. Gong, L. Jiu, Y. Zhang, T. Wang, A. Winkelmann, Semiconductor Science and Technology, Volume 35, Number 5, (2020).

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

N. Susilo, E. Ziffer, S. Hagedorn, L. Cancellara, C. Netzel, N. Lobo Ploch, S. Wu, J. Rass, S. Walde, L. Sulmoni, M. Guttmann, T. Wernicke, M. Albrecht, M. Weyers, M. Kneissl, Photonics Res., vol. 8, no. 4, pp. 589-594, (2020).

In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

J. Ruschel, J. Glaab, F. Mahler, T. Kolbe, S. Einfeldt, J. W. Tomm, Applied Physics Letters, Vol. 117, 121104, (2020).

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, L. Matiwe, C. Hartmann, G. Kusch, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, M. Bickermann, R. W. Martin, P. A. Shields, M. Kneissl, M. Weyers, Journal of Crystal Growth, Volume 531, Article 125343, (2020).

Status and prospects of AIN templates on sapphire for UV LEDs

S. Hagedorn, S. Walde, A. Knauer, N. Susilo, D. Pacak, L. Cancellara, C. Netzel, A. Mogilatenko, C. Hartmann, T. Wernicke, M. Kneissl, M. Weyers , Physica Status Solidi A, Volume 217, Issue 7, (2020).

Nanopatterned Sapphire Substrates in Deep-UV LEDs: Is there an Optical Benefit?

P. Manley, S. Walde, S. Hagedorn, M. Hammerschmidt, S. Burger, C. Becker, Optics Express, Volume 28, No. 3, pp. 3619-3635, DOI: 10.1364/OE.379438 (2020).

High temperature annealing of AIGaN

S. Hagedorn, T. Khan, C. Netzel, C. Hartmann, S. Walde, M. Weyers, Physica Status Solidi A, (2020).

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

N. Susilo, E. Ziffer, S. Hagedorn, L. Cancellara, C. Netzel, N. Lobo Ploch, S. Wu, J. Raß, B. Belde, S. Walde, L. Sulmoni, M. Guttmann, T. Wernicke, M. Albrecht, M. Weyers, M. Kneissl, Photonics Research, Volume 8, Issue 4, (2020).

Improved efficiency of UVB light emitting diodes with optimized p-side

T. Kolbe, A. Knauer, J. Rass, H. K. Cho, A. Mogilatenko, S. Hagedorn, N. Lobo Ploch, S. Einfeldt, M. Weyers, Physica Status Solidi A, Volume 217, Issue 20, (2020).

Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy

S. Fleischmann, S. Hagedorn, A. Mogilatenko, J. Weinrich, D. Prasai, E. Richter, R.-S. Unger, M. Weyers, G. Tränkle, Semiconductor Science and Technology, Volume 35, Number 3, (2020).

Improving AIN Crystal Quality and Strain Management on Nano-patterned Sapphire Substrates by High Temperature Annealing

S. Hagedorn, S. Walde, N. Susilo, C. Netzel, N. Tillner, R.-S. Unger, P. Manley, C. Becker, H.-J. Lugauer, M. Kneissl, M. Weyers, Physica status solidi (a), Volume 217, Issue 7, (2020).

Perspektiven physikalischer Verfahren der Antiseptik und Desinfektion

A. Kramer, M. Meinke, A. Patzelt, M. B. Stope, J. Lademann, K. Jacobs, Hyg Med; 45(3): D39–D43, mhp Verlag (2020).

Semiconductor Nanophotonics - Materials, Models, and Devices

M. Kneissl, A. Knorr, S. Reitzenstein, A. Hoffmann, (Eds.), Springer Series in Solid-State Sciences, Volume 194, Springer (2020).