Temperature Dependence of Dark Spot Diameters in GaN and AlGaN

C. Netzel,A. Knauer, F. Brunner, A. Mogilatenko, M. Weyers, phys. stat. sol. (b), vol. 258, no. 11, pp. 2100358, doi:10.1002/pssb.202100358, (2021).

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

L. Cancellara, T. Markurt, T. Schulz, M. Albrecht, S. Hagedorn, S. Walde, M. Weyers, S. Washiyama, R. Collazo, and Z. Sitar, J. Appl. Phys., vol. 130, no. 20, pp. 203101, doi:10.1063/5.0065935 (2021).

Subsequent treatment of leafy vegetables with low doses of UVB-radiation does not provoke cytotoxicity, genotoxicity, or oxidative stress in a human liver cell model

M. Wiesner-Reinhold, J.V. Dutra Gomes, C. Herz, H.T.T. Tran, S. Baldermann, S. Neugart, T. Filler, J. Glaab, S. Einfeldt, M. Schreiner, E. Lamy, Food Bioscience 43, 101327 (2021).

Advances towards deep-UV light emitting diode technologies

M. Kneissl, G. Cardinali, J. Enslin, M. Guttmann, C. Kuhn, F. Mehnke, M. Schilling, L. Sulmoni, N. Susilo, T. Wernicke, H.K. Cho, J. Glaab, J. Ruschel, S. Hagedorn, N. Lobo-Ploch, C. Netzel, J. Rass, S. Walde, U. Winterwerber, S. Einfeldt, M. Weyers, Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2021), Munich, Germany, Jun. 21-25, virtual event, ISBN: 978-1-6654-1876-8, cb-7-1 (2021).

High-Temperature Annealing and Patterned AlN/Sapphire Interfaces

S. Hagedorn, A. Mogilatenko, S. Walde, D. Pacak, J. Weinrich, C. Hartmann, and M. Weyers, Phys. Status Solidi B, vol. 258, no. 10, pp. 2100187, doi:10.1002/pssb.202100187 (2021).

Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs

J. Glaab, N. Lobo-Ploch, H. Kyong Cho, T. Filler, H. Gundlach, M. Guttmann, S. Hagedorn, S. B. Lohan, F. Mehnke, J. Schleusener, C. Sicher, L. Sulmoni, T. Wernicke, L. Wittenbecher, U. Woggon, P. Zwicker, A. Kramer, M. C. Meinke, M. Kneissl, M. Weyers, U. Winterwerber, S. Einfeldt , Scientific Reports volume 11, Article number 14647, (2021).

Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

M. Guttmann, A. Susilo, L. Sulmoni, N. Susilo, E. Ziffer, T. Wernicke, M. Kneissl, Journal of Physics D: Applied Physics, Volume 54, Number 33, (2021).

Origin of defect luminescence in ultraviolet emitting AIGaN diode structures

M. Feneberg, F. Romero, R. Goldhahn, T. Wernicke, C. Reich, J. Stellmach, F. Mehnke, A. Knauer, M. Weyers, M. Kneissl, Appl. Phys. Lett. 118, 202101 (2021).

Comparison of Ultraviolet B Light-Emitting Diodes with Single or Triple Quantum Wells

T. Kolbe, A. Knauer, J. Ruschel, J. Rass, H. K. Cho, S. Hagedorn, J. Glaab, N. Lobo Ploch, S. Einfeldt, M. Weyers, Physica Status Solidi A, (2021).

AIGaN-based deep UV LEDs: Applications and challenges

M. Kneissl, G. Gardinali, J. Enslin, M. Guttmann, C. Kuhn, F. Mehnke, L. Sulmoni, N. Susilo, T. Wernicke, H.K.Cho, J. Glaab, J. Ruschel, S. Hagedorn, N. Lobo-Ploch, C. Netzel, J. Rass, S. Einfeldt, M. Weyers, SPIE OPTO, (2021).

On the carrier kinetics in AI(In)GaN quantum wells stressed by high current densities

J.W. Tomm, J.Ruschel, J. Glaab, F. Mahler, T. Kolbe, S. Einfeldt , SPIE OPTO, (2021).

Mit UVC-Strahlung gegen Krank­heits­er­reger

M.C. Meinke, A. Kramer, U. Winterwerber, S. Einfeldt, M. Kneissl, J. Schleusener, P. Zwicker, Analytical Science, (2021).

Noninvasive measurement of the 308 nm LED-based UVB protection factor of sunscreens

S. Kobylinski, C. Reble, S. Schanzer, I. Gersonde, G. Wiora, N. Lobo Ploch, H. Karrer, L. Kolbe, G. Khazaka, J. Lademann, M.C. Meinke, J. Biophotonics, vol. 14, no. 4, e202000453, doi:10.1002/jbio.202000453 (2021).

Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm

F. Mehnke, C. Kuhn, M. Guttmann, L. Sulmoni, V. Montag, J. Glaab, T. Wernicke, M. Kneissl, Photonics Res., vol. 9, no. 6, pp. 1117-1123, (2021).