Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage measurements

N. Susilo, G.G. Roumeliotis, M. Narodovitch, B. Witzigmann, M. Rychetsky, S. Neugebauer, M. Guttmann, J. Enslin, A. Dadgar, T. Niermann, T. Wernicke, A. Strittmatter, M. Lehmann, D.N. Papadimitriou, M. Kneissl, Journal of Physics D: Applied Physics, Volume 51, Number 48, 485103 (2018), DOI: 10.1088/1361-6463/aae464.

Technologieanalysen. Ergebnisse der Umfrage zur Einstufung und Bewertung von Technologien

E. Eppinger, A. Tauber, V. Jarotschkin, M. Goepel, FU Berlin (2018).

Crystal defect analysis in AIN layers grown by MOVPE on bulk AIN

A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, R.-S. Unger, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann, Journal of Crystal Growth, Volume 505, 69 - 73 (2019), DOI: 10.1016/j.jcrysgro.2018.10.021.

Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning

H.K. Cho, A. Külberg, N. Lobo Ploch, J. Rass, J. Ruschel, T. Kolbe, A. Knauer, A. Braun, O. Krüger, S. Einfeldt, M. Weyers, M. Kneissl, IEEE Photonics Technology Letters, Volume 30, Issue 20, 1792 - 1794 (2018), DOI: 10.1109/LPT.2018.2869218.

From heterostructure design to package: development of efficient and reliable UVB LEDs

N. Lobo Ploch, T. Kolbe, A. Knauer, J. Rass, H. K. Cho, J. Glaab, J. Ruschel, A. Andrle, S. Hagedorn, K. Hilbrich, C. Stoelmacker, S. Knigge, M. Reiner, I. Ostermay, A. Thies, D. Prasai, O. Krueger, S. Einfeldt, M. Weyers, M. Kneissl, Proc. SPIE Volume 10532, Gallium Nitride Materials and Devices XIII, 1053220 (2018), DOI: 10.1117/12.2287131.

Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs

J. Ruschel, J. Glaab, M. Brendel, J. Rass, C. Stölmacker, N. Lobo-Ploch, T. Kolbe, T. Wernicke, F. Mehnke, J. Enslin, S. Einfeldt, M. Weyers, M. Kneissl, Journal of Applied Physics, Volume 124, Issue 8, 084504 (2018), DOI: 10.1063/1.5028047.

Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes

J. Glaab, J. Ruschel, F. Mehnke, M. Lapeyrade, M. Guttmann, T. Wernicke, M. Weyers, S. Einfeldt, M. Kneissl, Semiconductor Science and Technology, Volume 33, Number 9, 095017 (2018), DOI: 10.1088/1361-6641/aad765.

Thermal conductivity of single-crystalline AlN

R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, Applied Physics Express, Volume 11, Number 7, 071001 (2018), DOI: 10.7567/APEX.11.071001.

A predictive model for plastic relaxation in (0001)-oriented wurtzite thin films and heterostructures

T. Markurt, T. Schulz, P. Drechsel, P. Stauss, M. Albrecht, Journal of Applied Physics, Volume 124, Issue 3, 035303 (2018), DOI: 10.1063/1.5025813.

Degradation effects of the active region in UVC light-emitting diodes

J. Glaab, J. Haefke, J. Ruschel, M. Brendel, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, C. Kuhn, J. Enslin, M. Guttmann, T. Wernicke, M. Kneissl, Journal of Applied Physics, Volume 123, Issue 10, 104502 (2018), DOI: 10.1063/1.5012608.

UV-LED based diagnostics

C. Möller, M. Hentschel, T. Hensel, A. Müller, C. Heinze, T. Ortlepp, 9. CBM-Workshop 2018, Elgersburg.

DNA analysis with UV-LEDs

C. Möller, M. Hentschel, T. Hensel, A. Müller, C. Heinze, T. Ortlepp, Proc. SPIE Volume 10680, Optical Sensing and Detection V, 1068013 (2018), DOI: 10.1117/12.2306761.

DNA analysis with a LED based illuminaitonmodule
C. Möller, M. Hentschel, T. Hensel, A. Müller, C. Heinze, T. Ortlepp, O. Brodersen, Proc. Smart Systems Integration 2018, Dresden.

No More Sunburn

C. Reble, M. Meinke, J. Rass, Optik & Photonik, Volume 13, Issue 1 (2018), DOI: 10.1002/opph.201800001.

Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress

D. Monti, M. Meneghini, C. De Santi, S. Da Ruos, G. Meneghesso, E. Zanoni, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, Proc. SPIE Volume 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 1055410 (2018), DOI: 10.1117/12.2292202.

Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs

N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, M. Kneissl, Physica Status Solidi (a), Volume 215, Issue 10, 1700643 (2018), DOI: 10.1002/pssa.201700643.

Evaluation of detection distance-dependent reflectance spectroscopy for the determination of the sun protection factor using pig ear skin

C. Reble, I. Gersonde, S. Schanzer, M.C. Meinke, J. Helfmann, J. Lademann, Journal of Biophotonics, Volume 11, Issue 1 (2018), DOI: 10.1002/jbio.201600257.

Impact of open-core threading dislocations on the performance of AlGaN based metal-semiconductor-metal photodetectors

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, M. Weyers, Journal of Applied Physics, Volume 123, Issue 16, 161551 (2018), DOI: 10.1063/1.5010859.

AIGaN-based deep UV LEDs grown on sputtered high temperature annealed AIN/sapphire

N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl, Applied Physics Letters, Volume 112, Issue 4, 041110 (2018), DOI: 10.1063/1.5010265.

Thermocompression bonding for high-power-UV LEDs

I. Kaepplinger, D. Karolewski, G. Brokmann, T. Ortlepp, O. Brodersen, A. Thies, J. Rass, S. Einfeldt, N. Lobo-Ploch, C. Stölmaker, F. Schneider, Proc. SPIE Volume 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 105541B (2018), DOI: 10.1117/12.2287720.