High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes

D. Monti, C. De Santi, S. Da Ruos, F. Piva, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, and M. Meneghini, IEEE Transactions on Electron Devices, Volume: 66, Issue 8, 3387-3392 (2019), DOI: 10.1109/TED.2019.2920521.

Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes

J. Ruschel, J. Glaab, B. Beidoun, N. Lobo Ploch, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, and M. Kneissl, Photonics Research, Volume 7, Issue 7, B36-B40 (2019), DOI: 10.1364/PRJ.7.000B36.

Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm

M. Guttmann, F. Mehnke, B. Belde, F. Wolf, C. Reich, L. Sulmoni, T. Wernicke, M. Kneissl, Japanese Journal of Applied Physics, Volume 58, Number SC, SCCB20 (2019), DOI: 10.7567/1347-4065/ab0d09.

Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN

G. Kusch, J. Enslin, L. Spasevski, T. Teke, T. Wernicke, P. R. Edwards, M. Kneissl, R. W. Martin, Japanese Journal of Applied Physics, Volume 58, Number SC, SCCB18 (2019), DOI: 10.7567/1347-4065/ab147a.

Degradation of AlGaN-based metal-semiconductor-metal photodetectors

M. Brendel, S. Hagedorn, F. Brunner, M. Reiner, U. Zeimer, M. Weyers, Japanese Journal of Applied Physics, Volume 58, Number SC, SCCC21 (2019), DOI: 10.7567/1347-4065/ab1128.

Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates

H. M. Foronda, S. Graupeter, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, Japanese Journal of Applied Physics, Volume 58, Number SC, SC1026 (2019), DOI: 10.7567/1347-4065/ab124d.

Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance–voltage-measurements

N. Susilo, M. Schilling, M. Narodovitch, H.-H. Yao, X. Li, B. Witzigmann, J. Enslin, M. Guttmann, G. G. Roumeliotis, M. Rychetsky, I. Koslow, T. Wernicke, T. Niermann, M. Lehmann, M. Kneissl, Japanese Journal of Applied Physics, Volume 58, Number SC, SCCB08 (2019), DOI: 10.7567/1347-4065/ab09dd.

Indium incorporation in quaternary InxAlyGa1−x−yN for UVB-LEDs

J. Enslin, T. Wernicke, A. Lobanova, G. Kusch, L. Spasevski, T. Teke, B. Belde, R. W. Martin, R. Talalaev, M. Kneissl, Japanese Journal of Applied Physics, Volume 58, Number SC, SC1004 (2019), DOI: 10.7567/1347-4065/ab07a4.

Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy

S. Walde, S. Hagedorn, M. Weyers, Japanese Journal of Applied Physics, Volume 58, Number SC, SC1002 (2019), DOI: 10.7567/1347-4065/ab0cfc.

MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, M. Kneissl, Photonics Research, Volume 7, Issue 1, B7-B11 (2019), DOI: 10.1364/PRJ.7.0000B7.

High power UVB light emitting diodes with optimized n-AlGaN contact layers

A. Knauer, T. Kolbe, J. Rass, H. K. Cho, C. Netzel, S. Hagedorn, N. Lobo-Ploch, J. Ruschel, J. Glaab, S. Einfeldt, M. Weyers, Japanese Journal of Applied Physics, Volume 58, Number SC, SCCC02 (2019), DOI: 10.7567/1347-4065/ab0f13.

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

M. Kneissl, T.-Y. Seong, J. Han, H. Amano, Nature Photonics, Volume 13, 233–244 (2019), DOI: 10.1038/s41566-019-0359-9.

Enhanced heat dissipation for high-power UV LED devices using sintering

S. Nieland, D. Mitrenga, O. Brodersen, M. Schädel, T. Ortlepp, Proc. SPIE Volume 10940, Light-Emitting Devices, Materials, and Applications, 109401V (2019), DOI: 10.1117/12.2509438.

Discussion on reliability issues for UVB and UVS LEDs

S. Nieland, M. Weizman, D. Mitrenga, P. Rotsch, M. Schädel, O. Brodersen, T. Ortlepp, Proc. SPIE Volume 10940, Light-Emitting Devices, Materials, and Applications, 1094009 (2019), DOI: 10.1117/12.2509418.

An innovative Si package for high-performance UV LEDs

I. Käpplinger, R. Täschner, D. Mitrenga, D. Karolewski, L. Li, C. Meier, M. Schädel, T. Ortlepp, Proc. SPIE Volume 10940, Light-Emitting Devices, Materials, and Applications, 109400A (2019), DOI: 10.1117/12.2509395.

Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes

F. Römer, B. Witzigmann, M. Guttmann, N. Susilo, T. Wernicke, M. Kneissl, Proc. SPIE Volume 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120D (2019), DOI: 10.1117/12.2512182.

Stabilization of sputtered AlN/sapphire templates during high temperature annealing

S. Hagedorn, S. Walde, A. Mogilatenko, M. Weyers, L. Cancellara, M. Albrecht, D. Jaeger,  Journal of Crystal Growth, Volume 512, 142-146 (2019), DOI: 10.1016/j.jcrysgro.2019.02.024.

Degradation of (In)AlGaN-based UVB LEDs and migration of hydrogen

J. Glaab, J. Ruschel, T. Kolbe, A. Knauer, J. Rass, H.K. Cho, N. Lobo Ploch, S. Kreutzmann, S. Einfeldt, M. Weyers, M. Kneissl,  IEEE Photonics Technology Letters, Volume 31, Number 7, 529-532 (2019), DOI: 10.1109/LPT.2019.2900156.

AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire

S. Hagedorn, A. Knauer, M. Weyers, F. Naumann, H. Gargouri, Journal of Vacuum Science & Technology A, Volume 37, Issue 2, 020914 (2019), DOI: 10.1116/1.5079473.

Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm

F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, M. Kneissl, Applied Physics Express, Volume 12, Number 1, 012008 (2019), DOI: 10.7567/1882-0786/aaf788.

Influence of quartz on Silicon incorporation in HVPE grown AIN

S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle, Journal of Crystal Growth, Volume 507, 295-298 (2019), DOI: 10.1016/j.jcrysgro.2018.11.028.

Crystal defect analysis in AIN layers grown by MOVPE on bulk AIN

A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, R.-S. Unger, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann, Journal of Crystal Growth, Volume 505, 69-73 (2019), DOI: 10.1016/j.jcrysgro.2018.10.021.