Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

H. Miyake, G. Nishio, S. Suzuki, K. Hiramatsu, H. Fukuyama, J. Kaur, N. Kuwano,Appl. Phys. Express 9, 025501, (2016).

UVC LED: Bench scale irradiation of microorganisms with various wavelengths

T. Schwarzenberger, A. Neuner, J. Glaab, J. Eggers, Proc. IUVA World Congress (2016).

Effects on detection of radical formation in skin due to solar irradiation measured by EPR spectroscopy

S. Albrecht, S. Ahlberg, I. Beckers, D. Kockott, J. Lademann, V. Paul, L. Zastrow, M.C. Meinke, Methods, Volume 109, 44-54 (2016), DOI: 10.1016/j.ymeth.2016.06.005.

Application of UV Emitters in Dermatological Phototherapy

U. Wollina, B. Seme, A. Scheibe, E. Gutmann, in: M. Kneissl, J. Rass (Eds.): III-Nitride Ultraviolet Emitters - Technology and Applications, Springer Series in Materials Science, Volume 227, Springer (2016), 293-319.

Optical Polarization and Light Extraction from UV LEDs

J. Rass, N. Lobo Ploch, in: M. Kneissl, J. Rass (Eds.): III-Nitride Ultraviolet Emitters - Technology and Applications, Springer Series in Materials Science, Volume 227, Springer (2016), 137-170.

UV-B Elicitation of Secondary Plant Metabolites

M. Schreiner, I. Mewis, S. Neugart, R. Zrenner, J. Glaab, M. Wiesner, M. A. K. Jansen, in: M. Kneissl, J. Rass (Eds.): III-Nitride Ultraviolet Emitters - Technology and Applications, Springer Series in Materials Science, Volume 227, Springer (2016), 387-414.

Free radicals induced by sunlight in different spectral regions - in vivo versus ex vivo study

S.B. Lohan, R. Muller, S. Albrecht, K. Mink, K. Tscherch, F. Ismaeel, J. Lademann, S. Rohn, M.C. Meinke, Experimental Dermatology, Volume 25, Issue 5, 380-385 (2016), DOI: 10.1111/exd.12987.

Temperature and doping dependent changes in surfacerecombination during UV illumination of (Al)GaN bulk layers

C. Netzel, J. Jeschke, F. Brunner, A. Knauer, M. Weyers, Journal of Applied Physics, Volume 120, Issue 9, 095307 (2016), DOI: 10.1063/1.4962319.

Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%

F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, Journal of Applied Physics Volume 120, Issue 14, 145702 (2016), DOI: 10.1063/1.4964442.

Open IP strategies for enabling substainability transtitions

J. Sternkopf, F. Tietze, E. Eppinger, P. Vimalnath, Univerisity of Cambridge (UK) - Centre for Technology Management, Working Paper Series, Number 10 (2016), DOI: 10.17863/CAM.7143.

Triangular-shaped sapphire patterning for HVPE grown AlGaN layers

S. Fleischmann, E. Richter, A. Mogilatenko, D. Prasai, R.-St. Unger, M. Weyers and G. Tränkle, Physica Status Solidi (a), Volume 214, Issue 9, 1600751 (2017; online 2016), DOI: 10.1002/pssa.201600751.

Microbial Diversity and Parasitic Load in Tropical Fish of Different Environmental Conditions

P. Hennersdorf, S. Kleinertz, S. Theisen, M.A. Abdul-Aziz, G. Mrotzek, H.W. Palm and H.P. Saluz, PLoS ONE, Volume 11, Issue 3, e0151594 (2016), DOI: 10.1371/journal.pone.0151594.

Quantification of matrix and impurity elements in AlxGa1−xN compounds by secondary ion mass spectrometry

P. Jörchel,  P. Helm, F. Brunner, A. Thies, O. Krüger and M. Weyers, Journal of Vacuum Science & Technology B, Volume 34, Issue 3, 03H128 (2016), DOI: 10.1116/1.4943658.

Hyperspectal Imaging using intracellular spies: quantitative real-time measurement of intracellular parameters in vivo during host pathogen interaction

S. Mohebbi, F. Erfurth, P. Sehnert, A.A. Brakhage and H.P. Saluz, PLoS ONE, Volume 11, Issue 10, e0163505 (2016), DOI: 10.1371/journal.pone.0163505.

Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures

F. Tabataba-Vakili, T. Wunderer, M. Kneissl, Z. Yang, M. Teepe, M. Batres, M. Feneberg, B. Vancil, and N.M. Johnson, Applied Physics Letters, Volume 109, Issue 18, 181105 (2016), DOI: 10.1063/1.4967220.

Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs

J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, Ch. Kuhn, J. Rass, N.L. Ploch, T. Wernicke, M. Weyers and M. Kneissl, Proceedings of the 18th ICMOVPE, Journal of Crystal Growth, Volume 464, 185-189 (2016), DOI: 10.1016/j.jcrysgro.2017.01.052.

Precipitates originating from tungsten crucible parts in AlN bulk crystals grown by the PVT method

F. Langhans, S. Kiefer, C. Hartmann, T. Markurt, T. Schulz, Ch. Guguschev, M. Naumann, S. Kollowa, A. Dittmar, J. Wollweber and M. Bickermann, CRYSTAL Research & Technology, Volume 51, Issue 2, 129-136 (2016), DOI: 10.1002/crat.201500201.

AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs

S. Hagedorn, A. Knauer, A. Mogilatenko, E. Richter, and M. Weyers, Physica Status Solidi (a), Volume 213, Issue 12, 3178-3185 (2016), DOI: 10.1002/pssa.201600218.

Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

M. Rychetsky, I. Koslow, B. Avinc, J. Rass, T. Wernicke, K. Bellmann, L. Sulmoni, V. Hoffmann, M. Weyers, J. Wild, J. Zweck, B. Witzigmann, and M. Kneissl, Journal of Applied Physics, Volume 119, Issue 9, 095713 (2016), DOI: 10.1063/1.4943185.

Process control of MOCVD growth for LEDs by in-situ photoluminescence

C. Prall, K. Haberland, C. Kaspari, F. Brunner, M. Weyers, D. Rueter, Proc. SPIE Volume 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681A (2016), DOI: 10.1117/12.2209479.

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, Applied Physics Letters, Volume 108, Issue 15, 151108 (2016), DOI: 10.1063/1.4947102.

Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs

J. Glaab, N. Lobo Ploch, J. Rass, T. Kolbe, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, C. Stoelmacker, V. Kueller, A. Knauer, S. Einfeldt, M. Weyers, M. Kneissl, Proc. SPIE Volume 9748, Gallium Nitride Materials and Devices XI, 97481O (2016), DOI: 10.1117/12.2208906.

Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg

M. Rychetsky, I.L. Koslow, T. Wernicke, J. Rass, V. Hoffmann, M. Weyers, and M. Kneissl, Physica Status Solidi (b), Volume 253, Issue 1, 169-173 (2016), DOI: 10.1002/pssb.201552407.

Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces

A. Mogilatenko, A. Knauer, U. Zeimer and M. Weyers, Semiconductor Science and Technology, Volume 31, Number 2, 025007 (2016).

Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds

D. Nd. Faye, E. Wendler, M. Felizardo, S. Magalhães, E. Alves, F. Brunner, M. Weyers, and K. Lorenz, The Journal of Physical Chemistry C, Volume 120, Issue 13, 7277-7283 (2016), DOI: 10.1021/acs.jpcc.6b00133.

Nitride-Based UV-LEDs and Their Application : UVB and UVC LEDs enable new applications in disinfection, medicine, plant growth, sensing and material processing

J. Rass and N. Lobo Ploch, Optik & Photonik, Volume 11, Issue 3, 36-40 (2016), DOI: 10.1002/opph.201600020.

Microbiome analysis and detection of pathogenic bacteria of Penaeus monodon from Jakarta Bay and Bali

V.S.P. Oetama, P. Hennersdorf, M.A. Abdul-Aziz, G. Mrotzek, H. Haryanti, H.P. Saluz, Marine Pollution Bulletin, Volume 110, Issue 2, 718-725 (2016), DOI: 10.1016/j.marpolbul.2016.03.043.

Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN

A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl and M. Weyers, Physica Status Solidi (b), Volume 253, Issue 5, 809-813 (2016), DOI: 10.1002/pssb.201600075.

Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices

C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann, CrystEngComm, Volume 18, Issue 19, 3488-3497 (2016), DOI: 10.1039/C6CE00622A.

Kinetics of AlGaN metal-organic vapor phase epitaxy for deep-UV applications

A. Lobanova, E. Yakovlev, J. Jeschke, A. Knauer and M. Weyers, Japanese Journal of Applied Physics, Volume 55, Number 5S, 05FD07 (2016).

III-Nitride Ultraviolet Emitters - Technology and Applications

M. Kneissl, J. Rass (Eds.), Springer Series in Materials Science, Volume 227, Springer (2016).