High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes

S. Walde, C.-Y. Huang, C.-L. Tsai, W.-H. Hsieh, Y.-K. Fu, S. Hagedorn, H.-W. Yen, T.-C. Lu, M. Weyers, C.-Y. Huang , Acta Materialia, Volume 226,  doi: 10.1016, (2022). 

Spectrally pure far-UVC emission from AIGaN-based LEDs using dielectric band pass filters for skin-tolerant UV antisepsis

M. Guttmann, N. Lobo-Ploch, H. Gundlach, F. Mehnke, M. Schilling, L. Sulmoni, T. Wernicke, H. K. Cho, T. Filler, U. Woggon, I. Käpplinger, T. Ortlepp, J. Schleusener, M. C. Meinke, P. Zwicker, A. Kramer, S. Einfeldt, M. Kneissel , Journal of Physics D: Applied Physics, Volume 55, Number 20, (2022). 

Application of 233 nm far‑UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models

P. Zwicker, J. Schleusener, S. B. Lohan, L. Busch, C. Sicher, Sven Einfeldt, M. Kneissl, A. A. Kühl, C.M. Keck, C. Witzel, A. Kramer, M. C. Meinke, Sci Rep. 2022 Feb 16;12(1):2587. doi: 10.1038/s41598-022-06397-z. PMID: 35173210; PMCID: PMC8850561, (2022).

Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs

J. Glaab, J. Ruschel, N. Lobo Ploch, H.K. Cho, F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, M. Weyers, S. Einfeldt, M. Kneissl, J. Appl. Phys., vol. 131, no. 01, pp. 014501, doi:10.1063/5.0069590, (2022).