S. Fleischmann
Material aspects of hydride vapor phase epitaxy of aluminum gallium nitride
Dissertation, Technische Universität Berlin, 2019.
J. Glaab
Investigation of the degradation behavior of InAlGaN-based ultraviolet light-emitting diodes to improve their reliability
Dissertation, Technische Universität Berlin, 2019.
F. Mehnke
Design, epitaxy and characterization of AlGaN-based light emitting diodes with emission wavelenghts below 250 nm
Dissertation, Technische Universität Berlin, 2017.
F. Langhans
Extended defects in PVT-grown AlN
Dissertation, Technische Universität Berlin, 2016.
M. Brendel
Characterization and optimization of (Al, Ga)N based UV photodetectors
Dissertation, Technische Universität Berlin, 2016.
N. Gerber
Napcores as new core material for lightweight applications
Dissertation, BTU Cottbus-Senftenberg in cooperation with Fraunhofer Institute for Applied Polymer Research IAP - Research Division Polymeric Materials and Composites PYCO, 2016.
N. Lobo-Ploch
Chip designs for high efficiency III-nitride based ultraviolet light emitting diodes with enhanced light extraction
Dissertation, Technische Universität Berlin, 2015.
S. Hagedorn
Growth of aluminum gallium nitride by hydride vapor phase epitaxy
Göttingen: »Cuvillier Verlag, 2015.
Dissertation, Technische Universität Berlin, 2015.
ISBN 978-3-95404-985-1
V. Küller
Defect reduced AlN and AlGaN as basic layers for UV LEDs
Göttingen: »Cuvillier Verlag, 2014.
Dissertation, Technische Universität Berlin, 2014.
ISBN 978-3-95404-741-3